Plastic-Encapsulate MOSFETS

APPLICATION  DC/DC Converter  Load Switch for Portable Devices  Battery Switch FEATURE  TrenchFET Power MOSFET  Excellent RDS(on) and Low Gate Charge

文件：414.97 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

P-Channel Enhancement Mode Power MOSFET

Features ⚫ Surface mount package ⚫ High power and current handing capability ⚫ VDS= -12V,ID= -6A RDS(on)

文件：991.76 Kbytes 页数：5 Pages

HUIXIN

慧芯电子

Silicon NPN Power Transistor for Switching Power Applications

Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line–operated Switchmode Power supplies and electronic light ballasts. Features: • Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain hFE

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NTE

GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：84.83 Kbytes 页数：6 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：84.83 Kbytes 页数：6 Pages

RFMD

威讯联合