C830

PTCthermistorsforovercurrentprotection

CAPA830

1DDR3SO-DIMMsupportsupto4GBmemorycapacity

CAPA830

ZIOconnector

CDBG830-G

SMDSchottkyBarrierDiode

ReverseVoltage:20~60Volts ForwardCurrent:8A Features: •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-OUtilizingFlame RetardantEpoxyMoldingCompound. •Forsurfacemountedapplications. •ExceedsenviromentalstandardsofMIL-S-19500/228 •Lo

CEB830G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CEB830G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CED830A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 500V,4.1A,RDS(ON)=1.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CED830G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■500V,4.5A,RDS(ON)=1.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CED830G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 500V,4.5A,RDS(ON)=1.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CEF830G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.