SMD Schottky Barrier Diode

Reverse Voltage: 20 ~ 60 Volts Forward Current: 8 A Features: • Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds enviromental standards of MIL-S-19500/228 • Lo

文件：61.59 Kbytes 页数：2 Pages

COMCHIP

典琦

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

文件：402.2 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：648.72 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 500V, 4.1A, RDS(ON) = 1.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead-free plating ; RoHS compliant.

文件：364.89 Kbytes 页数：4 Pages

CET-MOS

华瑞