BS170

SmallSignalMOSFETSmallSignalMOSFETSmallSignalMOSFET

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The

BS170

SmallSignalMOSFET500mA,60VoltsN?묬hannelTO??2(TO??26)

BS170

N-ChannelEnhancementModeFieldEffectTransistor

BS170

SIPMOSSmall-SignalTransistor(NchannelEnhancementmodeLogicLevel)

•Nchannel •Enhancementmode •LogicLevel •VGS(th)=0.8...2.0V

BS170

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

BS170

N-Channel60-V(D-S)MOSFET

BS170

N-Channel60-V(D-S)MOSFET

BS170

N-Channel60-V(D-S)MOSFET

BS170F

SOT23N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

BS170F

60VoltVDS

FEATURES *60VoltVDS *RDS(ON)=5Ω PARTMARKINGDETAIL–MV