BC170

npnsiliconplanartransistor

BC170

LowLevelandGeneralPurposeAmplifiers

BD170

PLASTICPOWERTRANSISTORS

PNPPLASTICPOWERTRANSISTORS ComplementaryBD165,167,169 AudioAmplifierandDriverCircuitApplications

BJS170TS-JPH

SURFACEMOUNTLEDLAMPS

[GRANDHALO] SURFACEMOUNTLEDLAMPS

BS170

N-channelverticalD-MOStransistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinTO-92variantenvelopeandintendedforuseinrelay,high-speedandline-transformerdrivers. FEATURES •VerylowRDS(on). •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching. •Nosecondarybreakdow

BS170

TMOSFETSwitching(N-Channel-Enhancement)

TMOSFETSwitching N–Channel—Enhancement

BS170

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

BS170

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Theycanb

BS170

N-CHANNELENHANCEMENTMODETRANSISTOR

Features •HighInputImpedance •FastSwitchingSpeed •CMOSLogicCompatibleInput •NoThermalRunawayorSecondaryBreakdFeatures

BS170

DMOSTransistors(N-Channel)

FEATURES ♦Highinputimpedance ♦High-speedswitching ♦Nominoritycarrierstoragetime ♦CMOSlogiccompatibleinput ♦Nothermalrunaway ♦Nosecondarybreakdown