BAV170W

SURFACEMOUNT,LOWLEAKAGESWITCHINGDIODE

FEATURES Sufacemountpackageideallysuitedforautomaticinsertion. Verylowleakagecurrent.2pAtypicalatVR=75V. Lowcapacitance.4pFmaxatVR=0V,f=1MHz LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard

BB170

170tiepointsolderless“plug-in”breadboardsprovideaquickwaytobuildandtestcircuitsforexperimentationorwhenlearningelectronics.

Features 170tie-pointbreadboard,availablein8colors Doublesidedtapeand2mountingscrewsprovided Smallsizeallowsittobemountedinsmallspaces,suchasonArduino protoshields Goodforquickprojectsoradd-oncircuits. POMplastichousingforcolorbreadboards,ABSp

BC170

npnsiliconplanartransistor

BC170

LowLevelandGeneralPurposeAmplifiers

BD170

PLASTICPOWERTRANSISTORS

PNPPLASTICPOWERTRANSISTORS ComplementaryBD165,167,169 AudioAmplifierandDriverCircuitApplications

BJS170TS-JPH

SURFACEMOUNTLEDLAMPS

[GRANDHALO] SURFACEMOUNTLEDLAMPS

BPS170

BPS170Series–10mmDigitalPressureSensor

Features nSurfacemount nGaugepressure nImprovedlinearity nDigitalI2C nRoHScompliant* Applications nMedicalequipment** (lowtomediumrisk) nWhitegoods nIndustrialP/I nProcesscontrol

BS170

N-channelverticalD-MOStransistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinTO-92variantenvelopeandintendedforuseinrelay,high-speedandline-transformerdrivers. FEATURES •VerylowRDS(on). •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching. •Nosecondarybreakdow

BS170

TMOSFETSwitching(N-Channel-Enhancement)

TMOSFETSwitching N–Channel—Enhancement

BS170

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI