BAV103

General purpose diodes

DESCRIPTION TheBAV100toBAV103areswitchingdiodesfabricatedinplanartechnology,andencapsulatedinsmallhermeticallysealedglassSOD80CSMDpackages. FEATURES •SmallhermeticallysealedglassSMDpackage •Switchingspeed:max.50ns •Generalapplication •Continuou

BAV103

Silicon Epitaxial Planar Diodes

Features •SiliconEpitaxialPlanarDiodes •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications  •Generalpurposes

BAV103

High Voltage, General Purpose Diode

Description AgeneralpurposediodethatcoupleshighforwardconductancefastswichingspeedandhighblockingvoltagesinaglassleadlessLL-34surfacemountpackage.Placementoftheexpansiongaphasnorelationshiptothelocationofthecathodeterminalwhichisindicatedbythefirstcolo

BAV103

Small Signal Diodes

FEATURES ♦SiliconEpitaxialPlanarDiodes ♦Forgeneralpurpose ♦Thesediodesarealsoavailableinother casestylesincluding:theDO-35casewith thetypedesignationsBAV19toBAV21,theSOD-123 casewiththetypedesignationsBAV19WtoBAV21W, andtheSOT-23casewiththe

BAV103

SURFACE MOUNT SWITCHING DIODE

Features ●Case:MiniMELF,Glass ●Terminals:SolderableperMIL-STD-202,Method208 ●Polarity:CathodeBand ●Marking:CathodeBandOnly ●Weight:0.05grams(approx.) MechanicalData ●FastSwitchingSpeed ●SurfaceMountPackageIdeallySuitedforAutomaticInsertion ●ForGeneralPur

BAV103

Ultrafast Switching Surface Mount Si-Rectifiers

SuperfastRecoverySMDRectifierDiodes Features PackagecompatibletoSOD-87 Highpowerdissipation ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Rectificationofhigherfrequencies, Highspeedswitching Commercialgrade1) MechanicalData1)

BAV103

Ultrafast silicon rectifier diodes

ForwardCurrent:0,2A ReverseVoltage:50to300V Features ●Max.soldertemperature:260°C ●PlasticmaterialhasULclassification94V-0 ●Onegreenringdenotescathodeandultrafastswitchingdevice ●Thetypenumbersarenotedonlyonthelableonthereel

BAV103

HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES

VOLTAGE120to250VoltsPOWER300mWatts FEATURES •FastswitchingSpeed. •SurfaceMountPackageIdeallySuitedForAutomaticInsertion. •SiliconEpitaxalPlanarConstruction. •IncompliancewithEURoHS2002/95/ECdirectives

BAV103

500mW Hermetically Sealed Glass High Voltage Switching Diodes

Features ●—HighVoltageSwitchingDevice —●MiniMelfpackage —●Surfacedevicetypemounting —●Hermeticallysealedglass —●Compressionbondedconstruction —●Allexternalsurfacearecorrosionresistantandleadsarereadilysolderable —●RoHScompliant —●MatteTin(Sn

BAV103

High Voltage,General Purpose Diode

Features ●SiliconEpitaxialPlanarDiodes ●Forgeneralpurpose