RF 混频器和探测器肖特基二极管

这款英飞凌射频肖特基二极管是一款硅低势垒 N 型器件，片上集成有保护环，可提供过压保护。其低势垒高度、小正向电压和低结电容使 BAT24-02ELS 成为频率高达 24 GHz 的应用中混频器和检测器功能的合适选择。 • 低电感 LS = 0.2 nH（典型值）\n• TSSLP-2-3 封装（0.62 mm x 0.32 mm x 0.31 mm），占位面积为 0201\n• 无铅、符合 RoHS 标准且无卤素;

Infineon

英飞凌

丝印：S；Package：TSSLP-2-3；Single silicon Schottky diode

文件：349.44 Kbytes 页数：11 Pages

INFINEON

英飞凌

Silicon Schottky Diode

文件：578.4 Kbytes 页数：6 Pages

INFINEON

英飞凌

Silicon Schottky Diode

Silicon Schottky Diode • RF Schottky diode for mixer applications up to 26 GHz • Extremely low inductance combined with ultra low device capacitance • Very stable performance for all major parameters • Package size: 0.62 x 0.31 x 0.31 mm³ only • Pb-free (RoHS compliant) package

文件：574.8 Kbytes 页数：6 Pages

INFINEON

英飞凌

RoHS compliant and lead-free

SM Series Description The SMxx-02HTG series TVS Diode Array is designed to protect sensitive equipment from damage due to electrostatic discharge (ESD), electrical fast transients (EFT), and lightning induced surges. The SM series can absorb repetitive ESD strikes above the maximum level s

文件：742.67 Kbytes 页数：6 Pages

UMW

友台半导体