BAT24-02ELS数据手册Infineon中文资料规格书

描述 Description

This Infineon RF Schottky Diode is a silicon low barrier N-type device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage and low junction capacitance make BAT24-02ELS a suitable choice for mixer and detector functions in applications with frequencies are as high as 26 GHz.

特性 Features

·Low inductanve LS = 0.2 nH
·Low capacitance CT = 0.2 pF (typical) at 1MHz
·TSSLP-2-3 package (0.62 mm x 0.32 mmx 0.31 mm) with a 0201 footprint
·Pb-free,  RoHS compliant and halogen free

应用 Application

For mixer and detectors in: Mobile devices
Radar systems and modules