丝印：65*；Package：SOT-323；General-purpose Schottky diodes

General description General-purpose Schottky diodes in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed ■ Low leakage current ■ High breakdown voltage ■ Low capacitance Applications ■ Ultra high-speed switching ■ Voltage clamping

文件：227.24 Kbytes 页数：21 Pages

恩XP

丝印：65*；Package：SOT-323；General-purpose Schottky diodes

General description General-purpose Schottky diodes in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed ■ Low leakage current ■ High breakdown voltage ■ Low capacitance Applications ■ Ultra high-speed switching ■ Voltage clamping

文件：227.24 Kbytes 页数：21 Pages

恩XP

SURFACE MOUNT SCHOTTKY BARRIER DIODE

SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low forward voltage • Fast switching

文件：193.88 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)

Silicon Schottky Diode ●General-purpose diodes for high-speed switching ●Circuit protection ●Voltage clamping ●High-level detecting and mixing

文件：141.07 Kbytes 页数：4 Pages

SIEMENS

西门子

丝印：65；Package：SC-70；General-purpose dual Schottky diode

1. General description General-purpose dual Schottky diode in a small SOT323 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance 3. Applications • Ultra high-speed switching • V

文件：610.28 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：65；Package：SC-70；General-purpose dual Schottky diode

1. General description General-purpose dual Schottky diode in a small SOT323 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance • Qualified according to AEC-Q101 and recommended fo

文件：186.81 Kbytes 页数：8 Pages

NEXPERIA

安世

SCHOTTKY DIODES 120mA, 40V

DESCRIPTION 120mA Planar Schottky barrier diodes with an integrated guard ring for stress protection. Single diodes and double diodes with different pinning are available. The BAS40 is available in SOT 23 p a ckage FEATURES ⚫ Low Turn-on Voltage ⚫ Fast Switching ⚫ Low forward current

文件：249.21 Kbytes 页数：5 Pages

AITSEMI

创瑞科技

丝印：CB；200mA Surface Mount Small Signal Diodes

■ Features • Low current rectification and high speed switching. • Small surface mount type. • Up to 200mA current capability. • Low forward voltage drop (VF = 1.00V typ. @40mA). • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part, ex.BAS40G. • Le

文件：167.82 Kbytes 页数：3 Pages

CITC

竹懋科技

SCHOTTKY DIODE

FEATURES Power dissipation PD: 200 mW (Tamb=25℃) Forward Current IF: 200 m A Reverse Voltage VR: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：66.17 Kbytes 页数：1 Pages

TEL

Low Forward Voltage Drop, Fast Switching

FEATURES ● Low Forward Voltage Drop. ● Fast Switching. ● PN Junction Guard Ring for Transient and ESD Protection.

文件：1.09912 Mbytes 页数：2 Pages

SKTECHNOLGYSHIKE Electronics

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