BAS4

CASE 318-08, STYLE 8 SOT-23 TO-236AB

SchottkyBarrierDiodes TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespa

BAS4

Low-leakage diode

DESCRIPTION Epitaxialmedium-speedswitchingdiodewithalowleakagecurrentinasmallSOT23plasticSMDpackage. FEATURES •PlasticSMDpackage •Lowleakagecurrent:typ.3pA •Switchingtime:typ.0.8µs •Continuousreversevoltage:max.75V •Repetitivepeakreversevoltage:max.8

BAS4

SCHOTTKY array??SERIES

DESCRIPTION VariousconfigurationsofSchottkybarriersdiodesinSOT-23packagesareprovidedforgeneral-purposeuseinhigh-speedswitching,mixersanddetectorapplications.Theymayalsobeusedforsignalterminationsattheboardlevel.Thishelpsmaintainsignalintegrityandcounteract

BAS4

Schottky Diodes

FEATURES ♦Thesediodesfeatureverylowturn-on voltageandfastswitching. ♦ThesedevicesareprotectedbyaPN junctionguardringagainstexcessive voltage,suchaselectrostaticdischarges.

BAS4

Silicon Schottky Diode

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

BAS40

Schottky barrier double diodes

DESCRIPTION PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection.Singlediodesanddoublediodeswithdifferentpinningareavailable.ThediodesBAS40,BAS40-04,BAS40-05andBAS40-06areencapsulatedinaSOT23smallplasticSMDpackage.TheBAS40-07isencapsulat

BAS40

Surface Mount Schottky Barrier Diodes

Features ●LowTurn–onVoltage ●FastSwitching ●PNJunctionGuardRingforTransientandESD   Protection Applications   Fastswitchesinthickandthinfilmcircuits

BAS40

HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection)

HiRelSiliconSchottkyDiode Features •HiRelDiscreteandMicrowaveSemiconductor •General-purposediodesforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Hermeticallysealedmicrowavepackage •ESAQualificationpending

BAS40

Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)

HiRelSiliconSchottkyDiode Features •HiRelDiscreteandMicrowaveSemiconductor •General-purposediodesforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Hermeticallysealedmicrowavepackage •ESAQualificationpending

BAS40

Schottky Diodes

FEATURES ♦Thesediodesfeatureverylowturn-on voltageandfastswitching. ♦ThesedevicesareprotectedbyaPN junctionguardringagainstexcessive voltage,suchaselectrostaticdischarges.

BAS40

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Description 200mAsurfacemountSchottkyBarrierDiodeinSOT23package,offerslowforwardvoltagedropandfastswitchingcapability,designedwithPNJunctionGuardRingforTransientandESDProtection,totallylead-freefinishandRoHScompliant,”Green”device. FeaturesandBenefits •Low

BAS40

SCHOTTKY array??SERIES

DESCRIPTION VariousconfigurationsofSchottkybarriersdiodesinSOT-23packagesareprovidedforgeneral-purposeuseinhigh-speedswitching,mixersanddetectorapplications.Theymayalsobeusedforsignalterminationsattheboardlevel.Thishelpsmaintainsignalintegrityandcounteract

BAS40

Surface mount Schottky-Barrier Single-/ Double-Diodes

Features Veryhighswitchingspeed Lowjunctioncapacitance Lowleakagecurrent ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing,High-speed switching,Polarityprotection Commercialgrade1) MechanicalData1) Tapedandre

BAS40

HiRel Silicon Schottky Diode

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

BAS40

Surface Mount Schottky Diode

Voltage:40VoltsPower:200mW Features LowTurn-onVoltage LowForwardVoltage-0.5V(Max)@IF=30mA VeryLowCapacitance-LessThan5.0pF@1V Forhighspeedswitchingapplication,circuitprotection

BAS40

Silicon Schottky Diode

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

BAS40

Surface Mount Schottky Barrier Diode

Features LowTurn-onVoltage LowForwardVoltage-0.5V(Max)@IF=30mA VeryLowCapacitance-LessThan5.0pF@1V Forhighspeedswitchingapplication,circuitprotection

BAS40

SCHOTTKY DIODE

FEATURES Powerdissipation PD:200mW(Tamb=25℃) ForwardCurrent IF:200mA ReverseVoltage VR:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

BAS40

SURFACE MOUNT SCHOTTKY DIODES

SURFACEMOUNTSCHOTTKYDIODES VOLTAGE40VoltsCURRENT0.2Ampers FEATURES •Fastswitchingspeed •Surfacemountpackageideallysuitedforautomatic insertionElectricalidenticalstandardJEDEC •Highconductor •Pbfreeproduct:99Snabovecanmeet RoHSenvironmentsubstanc

BAS40

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features ●LowTurn-onVoltage ●FastSwitching ●PNJunctionGuardRingforTransientandESDProtection ●DesignedforSurfaceMountApplication ●PlasticMaterial–ULRecognitionFlammabilityClassification94V-O