BAS40-06

Marking：46*；Package：SOT-23；Schottky barrier double diodes

DESCRIPTION PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection.Singlediodesanddoublediodeswithdifferentpinningareavailable.ThediodesBAS40,BAS40-04,BAS40-05andBAS40-06areencapsulatedinaSOT23smallplasticSMDpackage.TheBAS40-07isencapsulat

BAS40-06

Marking：46；Package：SOT-23；Surface Mount Schottky Barrier Diodes

Features ●LowTurn–onVoltage ●FastSwitching ●PNJunctionGuardRingforTransientandESD   Protection Applications   Fastswitchesinthickandthinfilmcircuits

BAS40-06

Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)

HiRelSiliconSchottkyDiode Features •HiRelDiscreteandMicrowaveSemiconductor •General-purposediodesforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Hermeticallysealedmicrowavepackage •ESAQualificationpending

BAS40-06

Marking：K46；Package：SOT-23；SURFACE MOUNT SCHOTTKY BARRIER DIODE

Description 200mAsurfacemountSchottkyBarrierDiodeinSOT23package,offerslowforwardvoltagedropandfastswitchingcapability,designedwithPNJunctionGuardRingforTransientandESDProtection,totallylead-freefinishandRoHScompliant,”Green”device. FeaturesandBenefits •Low

BAS40-06

Schottky Diodes

FEATURES ♦Thesediodesfeatureverylowturn-on voltageandfastswitching. ♦ThesedevicesareprotectedbyaPN junctionguardringagainstexcessive voltage,suchaselectrostaticdischarges.

BAS40-06

Marking：46S；Package：SOT-23；Silicon Schottky Diode

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

BAS40-06

Marking：46；Package：SOT-23；Surface mount Schottky-Barrier Single-/ Double-Diodes

Features Veryhighswitchingspeed Lowjunctioncapacitance Lowleakagecurrent ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing,High-speed switching,Polarityprotection Commercialgrade1) MechanicalData1) Tapedandre

BAS40-06

SCHOTTKY DIODE

FEATURES Powerdissipation PD:200mW(Tamb=25℃) ForwardCurrent IF:200mA ReverseVoltage VR:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

BAS40-06

Surface mount schottky barrier diode

Surfacemountschottkybarrierdiode FEATURES ●Lowturn-onvoltage. ●Fastswitching. ●PNJunctionguardringfortransientand ESDprotection. APPLICATIONS ●Highspeedswitchingapplications. ●Circuitprotecting. ●Voltageclamping.

BAS40-06

Marking：46*；Package：SOT-23；General-purpose Schottky diodes

Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping