丝印：53；Package：SOT666；High-speed switching diode

1. General description High-speed switching diode, encapsulated in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance • Low leakage current • Reverse voltage: VR ≤ 100 V • Repetiti

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：53；Package：SOT666；High-speed switching diodes

Features and benefits  High switching speed: trr  4 ns  Low leakage current  Repetitive peak reverse voltage: VRRM  100 V  AEC-Q101 qualified  Low capacitance  Reverse voltage: VR  100 V  Small SMD plastic packages

文件：773.33 Kbytes 页数：21 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：KJP；Package：SOT563；SURFACE MOUNT SWITCHING DIODE ARRAY

Features  Fast Switching Speed  Low Forward Voltage: Maximum of 0.715V at 1mA  Fast Reverse Recovery: Maximum of 4ns  Low Capacitance: Maximum of 1.5pF  Low Leakage Current  Ultra-Small Surface Mount Package  Thermally Efficient Copper Alloy Leadframe for High Power Dissipation  T

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DIODES

美台半导体

SURFACE MOUNT SWITCHING DIODE ARRAY

Features  Fast Switching Speed  Low Forward Voltage: Maximum of 0.715V at 1mA  Fast Reverse Recovery: Maximum of 4ns  Low Capacitance: Maximum of 1.5pF  Low Leakage Current  Triple Isolated Fast Switching Diode Array  Ultra-Small Surface Mount Package  Thermally Efficient Copper Al

文件：585.29 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：KJP；Package：SOT563；SURFACE MOUNT SWITCHING DIODE ARRAY

Features  Fast Switching Speed  Low Forward Voltage: Maximum of 0.715V at 1mA  Fast Reverse Recovery: Maximum of 4ns  Low Capacitance: Maximum of 1.5pF  Low Leakage Current  Triple Isolated Fast Switching Diode Array  Ultra-Small Surface Mount Package  Thermally Efficient Copper Al

文件：585.29 Kbytes 页数：5 Pages

DIODES

美台半导体

Triple high-speed switching diodes

General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed: trr ≤ 4 ns ■ Low capacitance ■ Low leakage current ■ Reverse voltage: VR ≤ 100 V ■ Repetitive peak reverse voltage: VRRM ≤ 1

文件：81.04 Kbytes 页数：12 Pages

恩XP

High-speed switching diodes

General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed: trr ≤ 4 ns ■ Low capacitance ■ Low leakage current ■ Reverse voltage: VR ≤ 100 V ■ Repetitive peak reverse voltage: VRRM ≤ 1

文件：150.73 Kbytes 页数：20 Pages

恩XP

High-speed switching diodes

General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed: trr ≤ 4 ns ■ Low capacitance ■ Low leakage current ■ Reverse voltage: VR ≤ 100 V ■ Repetitive peak reverse voltage: VRRM ≤ 1

文件：150.73 Kbytes 页数：20 Pages

恩XP

丝印：16；Package：TSSOP6；High-speed switching diode

1. General description High-speed switching diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance • Low leakage current • Reverse voltage: VR ≤ 100 V • Repetitive peak

文件：213.26 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：16；Package：SC-88；High-speed switching diodes

Features and benefits  High switching speed: trr  4 ns  Low leakage current  Repetitive peak reverse voltage: VRRM  100 V  AEC-Q101 qualified  Low capacitance  Reverse voltage: VR  100 V  Small SMD plastic packages

文件：773.33 Kbytes 页数：21 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司