Switching Diode

Switching Diode Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：86.2 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Switching Diode

Switching Diode Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：86.2 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Switching Diode

Switching Diode Features • Pb−Free Packages are Available

文件：45.32 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Surface mount switching diode

FEATURES ● Fast switching speed. ● Surface mount package ideally suited for Automatic insertion. ● For general purpose switching applications. ● High conductance. APPLICATIONS ● High speed switching application.

文件：322.9 Kbytes 页数：3 Pages

BILIN

银河微电

Switching Diode

Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：90.44 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

SMD Small Signal Diodes

SMD Small Signal Diodes Features Very high switching speed Low junction capacitance Low leakage current Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, High-speed Switching, Rectifying Commercial grade Suffix -Q: AEC-Q101

文件：158.23 Kbytes 页数：2 Pages

Diotec

德欧泰克

SWITCHING DIODE VOLTAGE 100 Volts CURRENT 0.15 Ampere

VOLTAGE 100 Volts CURRENT 0.15 Ampere FEATURE * Small surface mounting type. (SOT-23) * High speed. (TRR=1.5nSec Typ.) * Suitable for high packing density. * Maximum total power disspation is 350mW. * Peak forward current is 450mA. APPLICATION * Ultra high speed switching

文件：75.24 Kbytes 页数：2 Pages

CHENMKO

力勤

丝印：A6；Package：SOT23；High-speed switching diode

1. General description High-speed switching diode, encapsulated in small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance • Low leakage current • Reverse voltage: VR ≤ 100 V • Repetitive peak reverse voltage

文件：204.25 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：Z101；Package：DFN1010D-3；High-speed switching diode

1. General description Single high-speed switching diode encapsulated in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low leakage current: IR ≤ 0.

文件：230.77 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Silicon Switching Diode Array (For high-speed switching applications Internal (galvanic) isolated Diodes in one package)

Silicon Switching Diode Array • For high-speed switching applications • Internal (galvanic) isolated Diodes in one package

文件：64.15 Kbytes 页数：4 Pages

SIEMENS

西门子