BAV116W

SwitchingDiode

Feature ●Verylowleakagecurrent ●Mediumspeedswitchingtimes ●HalogenandAntimonyFree(HAF),RoHScompliant ●Markingcode:ZX

BAV116WQ

SURFACEMOUNTLOWLEAKAGEDIODE

Features •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •VeryLowLeakageCurrent •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •TheBAV116WQissuitableforautomotiveapplicationsrequiringspecificchangecon

BAV116WS

SURFACEMOUNTLOWLEAKAGEDIODE

Features •FastSwitchingSpeed •UltraLowLeakageCurrent(5nA@VR=75V) •LowCapacitance •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3)

BAV116WSQ

SURFACEMOUNTLOWLEAKAGEDIODE

BBS-116-G-C

MACHINEDBOARDSTACKINGSTRIPS

BBS-116-G-C

MACHINEDBOARDSTACKINGSTRIPS

BBS-116-G-C

MACHINEDBOARDSTACKINGSTRIPS

BBS-116-G-C

MACHINEDBOARDSTACKINGSTRIPS

BCR116

NPNSiliconDigitalTransistor(Switchingcircuit,inverter,interfacecircuit,drivercircuit)

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=4.7kΩ,R2=47kΩ)

BCR116

NPNSiliconDigitalTransistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=4.7kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage