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BAS16VTB6_V01

SURFACE MOUNT SWITCHING DIODES

FEATURES Fast switching speed. Surface mount package Ideally Suited for Automatic insertion High Conductance Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard

文件:531.84 Kbytes 页数:5 Pages

PANJIT

強茂

BAS16VTWPT

FAST SWITCHING DIODE ARRAY VOLTAGE 75 Volts CURRENT 150 mAmpere

FEATURE * Small surface mounting type. (SOT-563) * High speed. (TRR= 1.5nSec Typ.) * Suitable for high packing density. * Maximum total power disspation is 200mW. * Peak forward current is 300mA. * Lead free devices APPLICATION * Ultra high speed switching * For general purpose switching

文件:79.69 Kbytes 页数:2 Pages

CHENMKO

力勤

BAS16VV

丝印:53;Package:SOT666;High-speed switching diode

1. General description High-speed switching diode, encapsulated in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance • Low leakage current • Reverse voltage: VR ≤ 100 V • Repetiti

文件:198.05 Kbytes 页数:8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS16VV

丝印:53;Package:SOT666;High-speed switching diodes

Features and benefits  High switching speed: trr  4 ns  Low leakage current  Repetitive peak reverse voltage: VRRM  100 V  AEC-Q101 qualified  Low capacitance  Reverse voltage: VR  100 V  Small SMD plastic packages

文件:773.33 Kbytes 页数:21 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS16VV

High-speed switching diodes

General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages Applications  High-speed switching  General-purpose switching

文件:773.63 Kbytes 页数:21 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS16VV

SURFACE MOUNT SWITCHING DIODE ARRAY

Features  Fast Switching Speed  Low Forward Voltage: Maximum of 0.715V at 1mA  Fast Reverse Recovery: Maximum of 4ns  Low Capacitance: Maximum of 1.5pF  Low Leakage Current  Ultra-Small Surface Mount Package  Thermally Efficient Copper Alloy Leadframe for High Power Dissipation  T

文件:598.89 Kbytes 页数:5 Pages

DIODES

美台半导体

BAS16VV

Triple high-speed switching diodes

General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed: trr ≤ 4 ns ■ Low capacitance ■ Low leakage current ■ Reverse voltage: VR ≤ 100 V ■ Repetitive peak reverse voltage: VRRM ≤ 1

文件:81.04 Kbytes 页数:12 Pages

恩XP

恩XP

BAS16VV

High-speed switching diodes

General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed: trr ≤ 4 ns ■ Low capacitance ■ Low leakage current ■ Reverse voltage: VR ≤ 100 V ■ Repetitive peak reverse voltage: VRRM ≤ 1

文件:150.73 Kbytes 页数:20 Pages

恩XP

恩XP

BAS16VV

High-speed switching diodes

General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed: trr ≤ 4 ns ■ Low capacitance ■ Low leakage current ■ Reverse voltage: VR ≤ 100 V ■ Repetitive peak reverse voltage: VRRM ≤ 1

文件:150.73 Kbytes 页数:20 Pages

恩XP

恩XP

BAS16VV-7

丝印:KJP;Package:SOT563;SURFACE MOUNT SWITCHING DIODE ARRAY

Features  Fast Switching Speed  Low Forward Voltage: Maximum of 0.715V at 1mA  Fast Reverse Recovery: Maximum of 4ns  Low Capacitance: Maximum of 1.5pF  Low Leakage Current  Ultra-Small Surface Mount Package  Thermally Efficient Copper Alloy Leadframe for High Power Dissipation  T

文件:598.89 Kbytes 页数:5 Pages

DIODES

美台半导体

技术参数

  • Compliance (Only Automotive supports PPAP):

    Standard (Q on Request)

  • Configuration:

    Triple

  • Polarity:

    Anode

  • Power Rating (mW):

    350 mW

  • N):

    No Y/N

  • Peak RepetitiveReverse VoltageVRRM (V):

    100 V

  • Reverse Recovery Time trr (ns):

    4 ns

  • Maximum Average Rectifier Current IO (mA):

    200 mA

  • Maximum Peak Forward Surge Current IFSM (A):

    4 A

  • Forward Voltage Drop VF @ IF (mA):

    0.715 mA

  • Maximum ReverseCurrent IR (µA):

    0.5 µA

  • Maximum Reverse Current IR @ VR (V):

    0.5 V

  • V(BR)R (V) Min (µA):

    100

  • TotalCapacitance CT (pF):

    1.5 pF

  • VF(V) Max @ IF=1.0mA:

    0.715

  • IR(uA) Max @ VR=80V:

    0.5

  • Packages:

    SOT563

供应商型号品牌批号封装库存备注价格
DIODES/美台
23+
NA
12730
原装正品代理渠道价格优势
询价
DIODES/美台
23+
NA
6000
原装正品假一罚百!可开增票!
询价
DIODES/美台
22+
SOT563
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
DIODES/美台
2023+
SOT563
48000
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站
询价
24+
N/A
46000
一级代理-主营优势-实惠价格-不悔选择
询价
Diodes Incorporated
25+
SOT-563 SOT-666
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
DIODES/美台
24+
SOT563
60000
全新原装现货
询价
Diodes
25+
电联咨询
7800
公司现货,提供拆样技术支持
询价
DIODES/美台
24+
N/A
500000
美台原厂超低价支持
询价
DIODES/美台
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
询价
更多BAS1供应商 更新时间2025-10-9 16:01:00