FDD6680S

N-channelAdvancedModePowerMOSFET

Features VDS=40V,ID=150A RDS(ON)

FDS6680

SingleN-ChannelLogicLevelPWMOptimizedPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features ■11.5A,30V.RDS(ON)=0.010W@VGS=10V RDS(ON

FDS6680

30VN-ChannelMOSFET

Features •Ultra-lowgatecharge •Highperformancetrenchtechnologyforextremely lowRDS(ON) •Highpowerandcurrenthandlingcapability (VGS=10V) VDS(V)=30V ID=12A RDS(ON)

FDS6680A

SingleN-Channel,LogicLevel,PowerTrenchMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features •12.5A,30VRDS(ON)=9.5mΩ@VGS=

FDS6680A

SingleN-Channel,LogicLevel,PowerTrench짰MOSFET

FDS6680A

30VN-ChannelMOSFET

Features •Ultra-lowgatecharge •Highperformancetrenchtechnologyforextremely lowRDS(ON) •Highpowerandcurrenthandlingcapability (VGS=10V) VDS(V)=30V ID=12A RDS(ON)

FDS6680A-NL

N-ChannelEnhancementModePowerMOSFET

Features VDS=20V,ID=10A RDS(ON)

FDS6680AS

30VN-ChannelPowerTrenchSyncFET

FDS6680AS

30VN-ChannelPowerTrenchSyncFET

GeneralDescription TheFDS6680ASisdesignedtoreplaceasingleSO-8MOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDS6680ASincludesanintegratedSchottkydio

FDS6680AS_NL

30VN-ChannelPowerTrenchSyncFET

GeneralDescription TheFDS6680ASisdesignedtoreplaceasingleSO-8MOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDS6680ASincludesanintegratedSchottkydio