SEMICONDUCTORS

文件：2.43533 Mbytes 页数：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

7 Circuits Darlinton Transistor Array

General Description BA12003B/BF,BA12004B/BFare darlinton transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode. Features ■ Built-in 7 circuits ■ High output break down voltage ■ High DC output current gain ■ Built-in input res

文件：1.1641 Mbytes 页数：19 Pages

ROHM

罗姆

High voltage, high current Darlington transistor array

The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor arrays consisting of seven circuits of Darlington transistors. Because it incorporates built-in surge-absorbing diodes and base current-control resistors needed when using inductive loa

文件：58.69 Kbytes 页数：6 Pages

ROHM

罗姆

7 Circuits Darlinton Transistor Array

General Description BA12003B/BF,BA12004B/BFare darlinton transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode. Features ■ Built-in 7 circuits ■ High output break down voltage ■ High DC output current gain ■ Built-in input res

文件：1.1641 Mbytes 页数：19 Pages

ROHM

罗姆

High voltage, high current Darlington transistor array

The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor arrays consisting of seven circuits of Darlington transistors. Because it incorporates built-in surge-absorbing diodes and base current-control resistors needed when using inductive loa

文件：58.69 Kbytes 页数：6 Pages

ROHM

罗姆

7 Circuits Darlinton Transistor Array

General Description BA12003B/BF,BA12004B/BFare darlinton transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode. Features ■ Built-in 7 circuits ■ High output break down voltage ■ High DC output current gain ■ Built-in input res

文件：1.1641 Mbytes 页数：19 Pages

ROHM

罗姆

7 Circuits Darlinton Transistor Array

General Description BA12003B/BF,BA12004B/BFare darlinton transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode. Features ■ Built-in 7 circuits ■ High output break down voltage ■ High DC output current gain ■ Built-in input res

文件：1.1641 Mbytes 页数：19 Pages

ROHM

罗姆

High voltage, high current Darlington transistor array

The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor arrays consisting of seven circuits of Darlington transistors. Because it incorporates built-in surge-absorbing diodes and base current-control resistors needed when using inductive loa

文件：115.89 Kbytes 页数：7 Pages

ROHM

罗姆

High voltage, high current Darlington transistor array

文件：115.89 Kbytes 页数：7 Pages

ROHM

罗姆

High voltage, high current Darlington transistor array

文件：115.89 Kbytes 页数：7 Pages

ROHM

罗姆