High voltage, high current Darlington transistor array

The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor arrays consisting of seven circuits of Darlington transistors. Because it incorporates built-in surge-absorbing diodes and base current-control resistors needed when using inductive loa

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7 Circuits Darlinton Transistor Array

General Description BA12003B/BF,BA12004B/BFare darlinton transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode. Features ■ Built-in 7 circuits ■ High output break down voltage ■ High DC output current gain ■ Built-in input res

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High voltage, high current Darlington transistor array

文件：115.89 Kbytes 页数：7 Pages

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7 Circuits Darlinton Transistor Array

General Description BA12003B/BF,BA12004B/BFare darlinton transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode. Features ■ Built-in 7 circuits ■ High output break down voltage ■ High DC output current gain ■ Built-in input res

文件：1.1641 Mbytes 页数：19 Pages

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High voltage, high current Darlington transistor array

The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor arrays consisting of seven circuits of Darlington transistors. Because it incorporates built-in surge-absorbing diodes and base current-control resistors needed when using inductive loa

文件：115.89 Kbytes 页数：7 Pages

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含7个电路的达林顿晶体管阵列

BA12003BF是含7个电路的NPN达林顿晶体管阵列。内置输入电阻及输出固定二极管。 ·Built-in 7 circuits\n·High output break down voltage\n·High DC output current gain \n·Built-in input resistor to limit base current\n·Built-in output surge absorption clamp diode;

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Package：16-SOIC（0.173"，4.40mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 驱动器，接收器，收发器 描述：IC DRIVER 7/0 16SOP

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