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型号：2SA1015；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ●ComplementaryTo2SC1815. ●ExcellentHFELinearity. ●Highvoltageandhighcurrent. ●Lownoise. ●Collector-EmittervoltageBVCEO=-50V. APPLICATIONS ●Lowfrequency,lownoiseamplifier.

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型号：2SA1015；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ●ComplementaryTo2SC1815. ●ExcellentHFELinearity. ●Highvoltageandhighcurrent. ●Lownoise. ●Collector-EmittervoltageBVCEO=-50V. APPLICATIONS ●Lowfrequency,lownoiseamplifier.

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型号：2SA1015-H；Package：SOT-23；PNP Transistors

Features ●Highvoltageandhighcurrent VCEO:=-50V(min.),IC=-150mA(max.) ●Lowniose:NF=1dB(Typ.)atf=1KHz

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型号：A1015；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES Highvoltageandhighcurrent ExcellenthFELinearity ComplementarytoC1815

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型号：A1015；Package：SOT-23；TRANSISTOR

TRANSISTOR(PNP) FEATURES ●Powerdissipation

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型号：ACDBUC0230L-HF；Package：SOD-523F；SMD Schottky Barrier Diode

Features -Lowforwardvoltage. -Designedformountingonsmallsurface. -Extremelythinpackage. -Majoritycarrierconduction. -AEC-Q101Qualified&PPAP.

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型号：AP2121AJ4-1.2TRG1；Package：CSP-4；HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

Features ·LowDropoutVoltageatIOUT=100mA:150mV Typical(Except1.2V,1.3Vand1.5VVersions) ·LowStandbyCurrent:0.1μATypical ·LowQuiescentCurrent:25μATypical ·HighRippleRejection:70dBTypical（f=1kHz） ·OutputCurrent:MoreThan200mA(300mA Limit) ·ExtremelyLowNoise:

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型号：BCW61A；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES Lowcurrent Lowvoltage GeneralPurposeTransistor

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型号：BCW61A；Package：SOT-23；PNP EPITAXIAL SILICON TRANSISTOR

PNPEPITAXIALSILICONTRANSISTOR GENERALPURPOSETRANSISTOR

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型号：BCW61A；Package：SOT-23；General Purpose Tramsistor

PNPEpitaxialSiliconTransistor GeneralPurposeTransistor