BAS521LP

HIGHVOLTAGESWITCHINGDIODE

Features •FastSwitchingSpeed:Maximumof50ns •HighReverseBreakdownVoltage:325V •LowLeakageCurrent:Maximumof50nAwhenVR=5Vor Maximumof150nAwhenVR=250VatRoomTemperature •UltraSmallPlasticSMDPackage:1.0mmx0.6mmx0.5mm •TotallyLead-Free&FullyRoHS

BAS521Q

HIGHVOLTAGESWITCHINGDIODE

Features FastSwitchingSpeed:max.50ns HighReverseBreakdownVoltage:300V LowLeakageCurrent:100nAatroomtemperature UltraSmallPlasticSMDPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Qualifiedto

BAS521-Q

High-voltageswitchingdiode

1.Generaldescription High-voltageswitchingdiode,encapsulatedinanultrasmallSOD523(SC-79)flatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤50ns •Highreversevoltage:VR≤300V •Repetitivepeakforwardcurrent:IFR

BAS521V

HIGHVOLTAGESWITCHINGDIODE

BAS521WT

HighVoltageSwitchingDiode

HighVoltageSwitchingDiode Applications •highspeedswitching •highvoltageswitching

BAS521WT

HighVoltageSwitchingDiode

BAS521WT

HighVoltageSwitchingDiode

Applications •highspeedswitching •highvoltageswitching

BB521

SCHOTTKYDIODES

[ITTComponents] SCHOTTKYDIODES

BCR521

NPNSiliconDigitalTransistor

NPNSiliconDigitalTransistor •Builtinbiasresistor(R1=1kΩ,R2=1kΩ) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

BCR521

NPNSiliconDigitalTransistor(Switchingcircuit,inverter,interfacecircuit,drivercircuit)

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=1kΩ,R2=1kΩ)