B506P数据手册贸易商思祁半导体THINKISEMI-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
B506P	文件：1.28807 Mbytes Page：3 Pages	50 Ampere Standard Type Negative Block Rectifier Diodes for Automotive Alternators 文件：1.28807 Mbytes 页数：3 Pages	THINKISEMI 思祁半导体	THINKISEMI
BB506C	文件：111.22 Kbytes Page：9 Pages	Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features Built in Biasing Circuit; To reduce using parts cost & PC board space. High gain PG = 24 dB typ. (f = 900 MHz) Low noise NF = 1.4 dB typ. (f = 900 MHz) Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz) Provide mini mold packages: CMPAK-4 (SOT-343mo 文件：111.22 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
BB506C	文件：105.42 Kbytes Page：9 Pages	Built in Biasing Circuit MOS FET IC 文件：105.42 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
BB506CFS	文件：111.22 Kbytes Page：9 Pages	Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features Built in Biasing Circuit; To reduce using parts cost & PC board space. High gain PG = 24 dB typ. (f = 900 MHz) Low noise NF = 1.4 dB typ. (f = 900 MHz) Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz) Provide mini mold packages: CMPAK-4 (SOT-343mo 文件：111.22 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS

更多B506P供应商更新时间2025-12-3 11:00:00