PBSS4160DPN

Marking：B4；Package：SC-74；60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PDZ3.3BGW

Marking：B4；Package：SOD123；Single Zener diodes in a SOD123 package

1.1Generaldescription General-purposeZenerdiodesinaSOD123smallSurface-MountedDevice(SMD) plasticpackage. 1.2Featuresandbenefits •Non-repetitivepeakreversepowerdissipation:PZSM≤40W •Totalpowerdissipation:Ptot≤365mW •Toleranceseries: B2:approximately±2 •

PEMB4

Marking：B4；Package：SOT666；PNP/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Lowcurrentperipheraldrivers •Replacementofgeneralpurposetransistorsindigitalapplications •ControlofICinputs. DESCRIPTION PNP/PNPresist

PTVS22VP1UP

Marking：B4；Package：SOD128；600 W Transient Voltage Suppressor

1.1Generaldescription 600WunidirectionalTransientVoltageSuppressor(TVS)inaSOD128smallandflatlead Surface-MountedDevice(SMD)plasticpackage,designedfortransientovervoltage protection. 1.2Featuresandbenefits 1.3Applications Powersupplyprotection Automotiveapplic

PTVS22VP1UP-Q

Marking：B4；Package：SOD128；600 W Transient Voltage Suppressor

1.Generaldescription 600WunidirectionalTransientVoltageSuppressor(TVS)inaSOD128smallandflatleadSurface- MountedDevice(SMD)plasticpackage,designedfortransientovervoltageprotection. 2.Featuresandbenefits •Ratedpeakpulsepower:PPPM=600W •Reversestandoffvolta

PTVS64VS1UR

Marking：B4；Package：SOD123W；400 W Transient Voltage Suppressor

1.1Generaldescription 400WunidirectionalTransientVoltageSuppressor(TVS)inaSOD123Wsmallandflat leadlow-profileSurface-MountedDevice(SMD)plasticpackage,designedfortransient overvoltageprotection. 1.2Featuresandbenefits 1.3Applications Powersupplyprotection Auto

PTVS64VS1UR-Q

Marking：B4；Package：SOD123W；400 W Transient Voltage Suppressor

1.Generaldescription 400WunidirectionalTransientVoltageSuppressor(TVS)inaSOD123Wsmallandflatlead Surface-MountedDevice(SMD)plasticpackage,designedfortransientovervoltageprotection. 2.Featuresandbenefits •Ratedpeakpulsepower:PPPM=400W(350Wfor3V3) •Reve

PUMB4

Marking：B4；Package：SOT363；PNP/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Lowcurrentperipheraldrivers •Replacementofgeneralpurposetransistorsindigitalapplications •ControlofICinputs. DESCRIPTION PNP/PNPresist

UMB4N

Marking：B4；Package：UMT6；General purpose (dual digital transistors)

Generalpurpose(dualdigitaltransistors) Features 1)TwoDTA114TchipsinaEMTorUMTorSMTpackage.

AU0541P1

Marking：B4；Package：DFN1006-2；1-Line Bi-directional TVS Diode