STB4NK60ZT4芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
STB4NK60Z-1	文件：731.33 Kbytes Page：32 Pages	丝印：B4NK60Z；Package：I2PAK；N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure 文件：731.33 Kbytes 页数：32 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STB4NK60ZT4	文件：731.33 Kbytes Page：32 Pages	丝印：B4NK60Z；Package：D2PAK；N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure 文件：731.33 Kbytes 页数：32 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

更多B4NK60Z供应商更新时间2025-8-12 9:19:00