RT9013B-30GQWC

Marking：B4*；Package：WDFN-61.6x1.6；300mA, Low Dropout, Low Noise Ultra-Fast Without Bypass Capacitor CMOS LDO Regulator

GeneralDescription TheRT9013Bisahigh-performance,300mALDOregulator,offeringextremelyhighPSRRandultra-lowdropout.TheRT9013BisIdealforportableRFandwirelessapplicationswithdemandingperformanceandspacerequirements. Features •WideOperatingVoltageRange:2.2Vto5.5

RT9169-15GX

Marking：B4=；Package：SOT-89；100 mA, 4uA QUIESCENT CURRENT CMOS LDO REGULATOR

GeneralDescription TheRT9169/Hseriesare100mAultra-lowquiescentcurrentCMOSlowdropout(LDO)regulatordesignedforbattery-poweredequipments.Theoutputvoltagesrangefrom1.2Vto5Vwith0.1Vperstep. Theotherfeaturesinclude4μAultra-lowquiescent,lowdropoutvoltage,highoutp

RT9169-15PX

Marking：B4-；Package：SOT-89；100 mA, 4uA QUIESCENT CURRENT CMOS LDO REGULATOR

GeneralDescription TheRT9169/Hseriesare100mAultra-lowquiescentcurrentCMOSlowdropout(LDO)regulatordesignedforbattery-poweredequipments.Theoutputvoltagesrangefrom1.2Vto5Vwith0.1Vperstep. Theotherfeaturesinclude4μAultra-lowquiescent,lowdropoutvoltage,highoutp

STB4NK60Z-1

Marking：B4NK60Z；Package：I2PAK；N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages

Description Thesehigh-voltagedevicesareZener-protectedN-channelPowerMOSFETs developedusingtheSuperMESH™technologybySTMicroelectronics,an optimizationofthewell-establishedPowerMESH™.Inadditiontoasignificant reductioninon-resistance,thesedevicesaredesignedtoensure

STB4NK60ZT4

Marking：B4NK60Z；Package：D2PAK；N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages

Description Thesehigh-voltagedevicesareZener-protectedN-channelPowerMOSFETs developedusingtheSuperMESH™technologybySTMicroelectronics,an optimizationofthewell-establishedPowerMESH™.Inadditiontoasignificant reductioninon-resistance,thesedevicesaredesignedtoensure

TPS7B4256QDDARQ1

Marking：B4256F；Package：SO-PowerPAD；TPS7B4256-Q1 Automotive, 70-mA, 40-V, Voltage-Tracking LDO With 6-mV Tracking Tolerance

1Features •AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade1:–40°Cto+125°C,TA –Junctiontemperature:–40°Cto+150°C,TJ •Wideinputvoltagerange: –Absolutemaximumrange:–40Vto+45V –Operatingrange:3Vto40V •Outputvoltage: –Wideoperatingrange:

TPS7B4256QDRQ1

Marking：B4256E；Package：SOIC；TPS7B4256-Q1 Automotive, 70-mA, 40-V, Voltage-Tracking LDO With 6-mV Tracking Tolerance

1Features •AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade1:–40°Cto+125°C,TA –Junctiontemperature:–40°Cto+150°C,TJ •Wideinputvoltagerange: –Absolutemaximumrange:–40Vto+45V –Operatingrange:3Vto40V •Outputvoltage: –Wideoperatingrange:

TPS7B4256QDRQ1

Marking：B4256E；Package：SOIC；TPS7B4256-Q1 Automotive, 70-mA, 40-V, Voltage-Tracking LDO With 6-mV Tracking Tolerance

1Features •AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade1:–40°Cto+125°C,TA –Junctiontemperature:–40°Cto+150°C,TJ •Wideinputvoltagerange: –Absolutemaximumrange:–40Vto+45V –Operatingrange:3Vto40V •Outputvoltage: –Wideoperatingrange:

TPS7B4256QDRQ1

Marking：B4256E；Package：SOIC；TPS7B4256-Q1 Automotive, 70-mA, 40-V, Voltage-Tracking LDO With 6-mV Tracking Tolerance

1Features •AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade1:–40°Cto+125°C,TA –Junctiontemperature:–40°Cto+150°C,TJ •Wideinputvoltagerange: –Absolutemaximumrange:–40Vto+45V –Operatingrange:3Vto40V •Outputvoltage: –Wideoperatingrange:

TPS7B4260QDDARQ1

Marking：B4260F；Package：SO-PowerPAD；TPS7B4260-Q1 Automotive, 300mA, 40V, Voltage-Tracking LDO With 6mV Tracking Tolerance

1Features •AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade1:–40°Cto+125°C,TA –Junctiontemperature:–40°Cto+150°C,TJ •Wideinputvoltagerange: –Absolutemaximumrange:–40Vto+45V –Operatingrange:3.3Vto40V •Outputvoltage: –Wideoperatingrange:2V