Surface Mount Schottky Barrier Rectifier

FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficifieency • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC and in accordance to

文件：82.89 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface-Mount Schottky Barrier Rectifier

FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.visha

文件：91.37 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface-Mount Schottky Barrier Rectifier

FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.visha

文件：91.37 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features  Guard Ring Die Construction for Transient Protection  Ideally Suited for Automated Assembly  Low Power Loss, High Efficiency  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3 )  Qualified to AEC-Q101 Standards for High Reliabil

文件：464.84 Kbytes 页数：6 Pages

DIODES

美台半导体

Surface Mount Schottky Barrier Rectifier

文件：78.57 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface Mount Schottky Barrier Rectifier

文件：76.93 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

文件：484.1 Kbytes 页数：3 Pages

DIODES

美台半导体

Surface Mount Schottky Barrier Rectifier

文件：73.74 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky

Diodes

美台半导体

3.0A SCHOTTKY BARRIER RECTIFIER

The schottky rectifier providing low VF and excellent reverse leakage stability at high temperatures, this device is ideal for use in general rectification applications. Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation\nReduced High-temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation.\nLead-Free Finish; RoHS Compliant\nHalogen and Antimony Free. “Green” Device;

Diodes

美台半导体