丝印：B3；Package：SC-70；Dual high-speed switching diode

Features and benefits  High switching speed: trr  4 ns  Repetitive peak reverse voltage: VRRM  85 V  Reverse voltage: VR  80 V  AEC-Q101 qualified  Low capacitance: Cd  1.5 pF  Repetitive peak forward current: IFRM  500 mA  Very small SMD plastic package

文件：810.38 Kbytes 页数：11 Pages

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安世安世半导体(中国)有限公司

丝印：B3；Package：SOT-23；Switching Diode

Features ● Small Package ● Low forward voltage :VF(3) = 0.9 V(Typ.) ● Fast Reverse Recovery Time :trr = 1.6 ns(Typ.) ● Small Total Capacitance :CT = 0.9pF(Typ.)

文件：463.3 Kbytes 页数：3 Pages

YFWDIODE

佑风微电子

丝印：B3；Package：SOT-23；Surface mount switching diode

FEATURES ● Low forward voltage VF=0.9V(typ). ● Small total capacitance. ● Fast reverse recovery time:trr=1.6ns(typ). APPLICATIONS ● High speed switching application.

文件：280.68 Kbytes 页数：3 Pages

BILIN

银河微电

丝印：B3；Package：SOT-23；Switching DIODES

FEATURES • Low forward voltage : VF(3)=0.9V(typ.) • Fast reverse recovery time : trr=1.6ns(typ.)

文件：269.45 Kbytes 页数：2 Pages

KOOCHIN

灏展电子

丝印：B3；Package：SOT-323；Silicon Epitaxial Planar Switching Diode

FEATURES Low forward voltage Fast reverse recovery time -CAR for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable

文件：200.28 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：B3；Package：XQFN10；2-bit dual supply translating transceiver with configurable voltage translation; 3-state

1. General description The 74AVC2T245-Q100 is a 2-bit, dual supply transceiver that enables bidirectional level translation. The device can be used as two 1-bit transceivers or as a 2-bit transceiver. It features two 2-bit input-output ports (An and Bn) and direction control inputs (DIRn), an o

文件：281.04 Kbytes 页数：21 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：B3；Package：SOD-523F；SMD Schottky Barrier Diode

Features - Low forward voltage. - Designed for mounting on small surface. - Extremely thin package. - Majority carrier conduction. - AEC-Q101 Qualified & PPAP.

文件：472.31 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：B3；Package：HUSON3；20 V, 2 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.11315 Mbytes 页数：24 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：B3；Package：DFN1110D-3；45 V, 500 mA NPN general-purpose transistors

Features and benefits • High power dissipation capability • High current • Three current gain selections • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm • AEC-Q101 qualified

文件：320.55 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：B3；Package：DFN1110D-3；45 V, 500 mA NPN general-purpose transistors

Features and benefits • High power dissipation capability • High current • Three current gain selections • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm • Qualified according to

文件：331.01 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司