丝印：B2XX；Package：DFN8；1500 – 2700 MHz High Linearity LNA

Device Features • Internally matched to 50 ohms • Operated at 3.0V and 5.0V • 36.2 dBm Output IP3 at 0dBm/tone at 1850 MHz • 18.5dB Gain at 1850MHz • 19.6dBm P1dB at 1850MHz • 0.77 dB NF at 1850MHz on evaluation board • Green/RoHS2 Compliant DFN8 2x2 Package Product Description BeRex’s

文件：1.12502 Mbytes 页数：17 Pages

BEREX

丝印：B2XXAF；Package：SMAF；2.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：567.07 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：B2XXAF；Package：SMAF；2.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：567.07 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：B2XXAF；Package：SMAF；2.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：567.07 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：B2XXAF；Package：SMAF；2.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：567.07 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：B2XXAE；Package：SMA；2.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：447.03 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：B2XXAF；Package：SMAF；2.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：633.25 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：B2XXAF；Package：SMAF；2.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：492.28 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：B2XXAE；Package：SMA；2.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：447.03 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：B2XXAE；Package：SMA；2.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：447.03 Kbytes 页数：6 Pages

DIODES

美台半导体