STB20NK50Z-S

Marking：B20NK50Z；Package：I2SPAK；N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchseri

STB20NK50ZT4

Marking：B20NK50Z；Package：D2PAK；N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchseri

STB20NM60-1

Marking：B20NM60；Package：I2PAK；N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple

STB20NM60T4

Marking：B20NM60；Package：D2PAK；N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple

UN010N88DE

Marking：B23；Package：DFN1006-3L；N-Channel Enhancement Mode MOSFET

Features AdvancedTrenchProcessTechnology LowThresholdVoltage FastSwitchingSpeed Halogen-Free&Lead-Free Applications LoadSwitchforPortableDevices VoltageControlledSmallSignalSwitch

2N5401SQ

Marking：B2L；Package：SOT-89；PNP Transistor

74AHCT1G125DBVRE4

Marking：B25G；Package：SOT-23；Single Bus Buffer Gate With 3-State Output

74AHCT1G125DBVRG4

Marking：B25G；Package：SOT-23；Single Bus Buffer Gate With 3-State Output

74AHCT1G125DBVTG4

Marking：B25G；Package：SOT-23；Single Bus Buffer Gate With 3-State Output

B2N60

Marking：B2N60；Package：TO-251；2A 600V N-channel Enhancement Mode Power MOSFET