丝印：B1XXAF；Package：SMAF；1.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：419.05 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：B1XXAF；Package：SMAF；1.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：419.05 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：B1XXAF；Package：SMAF；1.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：419.05 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：B1XXAF；Package：SMAF；1.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：415 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：B1XXAF；Package：SMAF；1.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：415 Kbytes 页数：5 Pages

DIODES

美台半导体