B1D06065E芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
B1D06065E	文件：849.56 Kbytes Page：7 Pages	丝印：B1D06065E；Package：TO-252-2；SiC Schottky Diode Features ⚫ Extremely low reverse current ⚫ No reverse recovery current ⚫ Temperature independent switching ⚫ Positive temperature coefficient on VF ⚫ Excellent surge current capability ⚫ Low capacitive charge Benefits ⚫ Essentially no switching losses ⚫ System efficiency improvement over 文件：849.56 Kbytes 页数：7 Pages	BASICSEMI 基本半导体	BASICSEMI
B1D06065E	文件：849.56 Kbytes Page：7 Pages	丝印：B1D06065E；Package：TO-252-2；SiC Schottky Diode Features ⚫ Extremely low reverse current ⚫ No reverse recovery current ⚫ Temperature independent switching ⚫ Positive temperature coefficient on VF ⚫ Excellent surge current capability ⚫ Low capacitive charge Benefits ⚫ Essentially no switching losses ⚫ System efficiency improvement over 文件：849.56 Kbytes 页数：7 Pages	BASICSEMI 基本半导体	BASICSEMI

更多B1D06065E供应商更新时间2022-10-9 9:39:00