丝印：L4；Package：SOD-123ST；1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

文件：91.99 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：L2；Package：SOD-123ST；1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

文件：91.99 Kbytes 页数：3 Pages

CITC

竹懋科技

Surface-Mount Schottky Barrier Rectifier

FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definit

文件：116.31 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Ideally Suited for Automatic Assembly • Low Power Loss, High Efficiency • Surge Overload Rating to 70A Peak • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection App

文件：65.67 Kbytes 页数：2 Pages

DIODES

美台半导体

Surface Mount Schottky Barrier Diodes

Features: * Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Low Leakage Current * High Current Capability * Plastic Material Has UL Flammability Classification 94V-0 * For Use in, High Frequency Inverters, Free Wheeling, and Polarity Pro

文件：139.24 Kbytes 页数：3 Pages

WEITRON

N-CHANNEL 75V - 0.0065 ohm -120A DPAK/IPAK/TO-220 STripFET II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件：541 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • High Conductance • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3)

文件：114.12 Kbytes 页数：3 Pages

DIODES

美台半导体

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • High Conductance • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3)

文件：114.12 Kbytes 页数：3 Pages

DIODES

美台半导体

1A 40V Schottky diode

文件：311.992 Kbytes 页数：2 Pages

SUNMATE

森美特

PDF上传者：深圳冠荣电子有限公司

1A 40V Schottky diode

文件：468.224 Kbytes 页数：2 Pages

SUNMATE

森美特

PDF上传者：深圳冠荣电子有限公司