BD135

PlasticMediumPowerSiliconNPNTransistor

PlasticMediumPowerSiliconNPNTransistor ...designedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. •DCCurrentGain—hFE=40(Min)@IC=0.15Adc •BD135,137,139arecomplementarywithBD136,138,140

BD135

NPNSILICONTRANSISTORS

Description TheseepitaxialplanartransistorsaremountedintheSOT-32plasticpackage.Theyaredesignedforaudioamplifiersanddriversutilizingcomplementaryorquasi-complementarycircuits.TheNPNtypesaretheBD135andBD139,andthecomplementaryPNPtypesaretheBD136andBD140. Fe

BD135

NPNpowertransistors

DESCRIPTION NPNpowertransistorinaTO-126;SOT32plasticpackage.PNPcomplements:BD136,BD138andBD140 FEATURES •Highcurrent(max.1.5A) •Lowvoltage(max.80V). APPLICATIONS •Driverstagesinhi-fiamplifiersandtelevisioncircuits.

ETC

BD135

NPNSILICONTRANSISTORS

BD135

Plastic-EncapsulatedTransistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1.25W(Tamb=25℃) Collectorcurrent ICM:1.5A Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

BD135

Complementarylowvoltagetransistor

BD135

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •Highcurrent •ComplementtotypeBD136/138/140 APPLICATIONS •Driverstagesinhigh-fidelityamplifiers andtelevisioncircuits

BD135

PlasticMediumPowerSiliconNPNTransistor

PlasticMediumPowerSiliconNPNTransistor Thisseriesofplastic,medium−powersiliconNPNtransistorsaredesignedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •Pb−FreePackagesareAvailable •DCCurrentGain−hFE=40(Min)@

BD135

EPITAXIALPLANARNPNTRANSISTOR

GENERALPURPOSEAPPLICATION. FEATURES •HighCurrent.(Max.:1.5A) •LowVoltage(Max.:45V) •DCCurrentGain:hFE=40Min.@IC=0.15A •ComplementarytoBD136.

BD135

PowerTransistorsNPNSilicon45,60,80Volts

Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •DCCurrentGain-hFE=40(Min)@IC=150mAdc •ComplementarywithBD136,BD138,BD140