首页 >ATS276C-P-B>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SiliconSchottkyBarrierDiodeforBalancedMixer Features •Highforwardcurrent,Lowcapacitance. •HSB276Swhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •CMPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly. | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
SiliconSchottkyBarrierDiode Features ●Highforwardcurrent,Lowcapacitance. ●HSB276Swhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. ●CMPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
SiliconSchottkyBarrierDiodeforDetectorandMixer Features •Highforwardcurrent,Lowcapacitance. •HSB276Swhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •CMPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HSC276_03 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconSchottkyBarrierDiode Features ●Highforwardcurrent,Lowcapacitance. ●UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
SiliconSchottkyBarrierDiodeforMixer Features •Highforwardcurrent,Lowcapacitance. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign. | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
SiliconSchottkyBarrierDiodeforMixer Features •Highforwardcurrent,Lowcapacitance. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign. | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
SiliconSchottkyBarrierDiodeforMixer Features •Highforwardcurrent,Lowcapacitance. •UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconSchottkyBarrierDiodeforDetector | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
SiliconSchottkyBarrierDiodeforDetector | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconSchottkyBarrierDiodeforDetector | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconSchottkyBarrierDiodeforBalancedMixer Features •Highforwardcurrent,Lowcapacitance. •HSM276ASwhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconSchottkyBarrierDiodeforBalancedMixer Features •Highforwardcurrent,Lowcapacitance. •HSM276ASwhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly. | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
SiliconSchottkyBarrierDiodeforBalancedMixer Features •Highforwardcurrent,Lowcapacitance. •HSM276ASRwhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconSchottkyBarrierDiodeforBalancedMixer Features •Highforwardcurrent,Lowcapacitance. •HSM276ASRwhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly. | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
SiliconSchottkyBarrierDiodeforBalancedMixer Features •Highforwardcurrent,Lowcapacitance. •HSM276Swhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconSchottkyBarrierDiode Features ●Highforwardcurrent,Lowcapacitance. ●HSM276ASRwhichisinterconnectedinseriesconfiguration isdesignedforbalancedmixeruse. ●MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
SiliconSchottkyBarrierDiodeforBalancedMixer Features •Highforwardcurrent,Lowcapacitance. •HSM276Swhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly. | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
SiliconSchottkyBarrierDiodeforBalancedMixer Features •Highforwardcurrent,Lowcapacitance. •HSM276SRwhichisinterconnectedinseriesconfigurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensitysurfacemountingandhighspeedassembly. | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
SiliconSchottkyBarrierDiode Features •Highforwardcurrent,Lowcapacitance. •HSM276ASRwhichisinterconnectedinseriesconfigurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensitysurfacemountingandhighspeedassembly. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN |
详细参数
- 型号：
ATS276C-P-B
- 制造商：
ANACHIP
- 制造商全称：
Anachip Corp
- 功能描述：
Complementary Output Hall Effect Latch
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ANACHIP |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
DIODES |
23+ |
SIP-4L |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
DIODES/美台 |
1936+ |
SIP-4 |
6852 |
只做原装正品现货或订货!假一赔十! |
询价 | ||
DIODES |
11+P |
SIP-4 |
5582 |
库存刚更新加微13425146986 |
询价 | ||
DIODES |
2023+ |
SIP-4 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
DIODES |
21+ |
SIP-4 |
35200 |
一级代理/放心采购 |
询价 | ||
DIODES/美台 |
SIP-4 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
DIODES/美台 |
23+ |
SIP-4 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
DIODES美台 |
24+23+ |
SIP-4 |
12580 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
DIODES/美台 |
23+ |
SIP-4 |
20000 |
原装正品 欢迎咨询 |
询价 |
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