Silicon Schottky Barrier Diode for Balanced Mixer

Features • High forward current, Low capacitance. • HSM276SR which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

文件：25.99 Kbytes 页数：5 Pages

HITACHIHitachi Semiconductor

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Silicon Schottky Barrier Diode for Detector and Mixer

Features • High forward current, Low capacitance. • HSM276SR which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

文件：64.64 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon Schottky Barrier Diode

Features • High forward current, Low capacitance. • HSM276ASR which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

文件：36.46 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon Schottky Barrier Diode for Detector and Mixer

• High forward current, Low capacitance.\n• HSM276SR which is interconnected in series configuration is designed for balanced mixer use.\n• MPAK package is suitable for high density surface mounting and high speed assembly. ;

Renesas

瑞萨

Silicon Schottky Barrier Diode for Balanced Mixer

• High forward current, Low capacitance.\n• HSM276SR which is interconnected in series configuration is designed for balanced mixer use.\n• MPAK package is suitable for high density surface mounting and high speed assembly. ;

HITACHI

日立