Silicon Schottky Barrier Diode for Balanced Mixer

Features • High forward current, Low capacitance. • HSM276ASR which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

文件：23.56 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon Schottky Barrier Diode for Balanced Mixer

Features • High forward current, Low capacitance. • HSM276ASR which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

文件：141.39 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon Schottky Barrier Diode for Balanced Mixer

• High forward current, Low capacitance.\n• HSM276ASR which is interconnected in series\n   configuration is designed for balanced mixer use.\n• MPAK package is suitable for high density\n   surface mounting and high speed assembly.;

HITACHI

日立

Diodes>Switching

Renesas

瑞萨