ATP106

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-PurposeSwitchingDeviceApplications Features •LowON-resistance •Slimpackage •Halogenfreecompliance •Largecurrent •4.5Vdrive •Protectiondiodein

ATP106-TL-H

P-Channel Power MOSFET

P-ChannelPowerMOSFET –40V,–30A,25mΩ,SingleATPAK Features •LowON-resistance •Slimpackage •Halogenfreecompliance •Largecurrent •4.5Vdrive •Protectiondiodein

ATP107

P-Channel Power MOSFET

P-ChannelPowerMOSFET –40V,–50A,17mΩ,SingleATPAK Features •LowON-resistance •Slimpackage •Halogenfreecompliance •Largecurrent •4.5Vdrive •Protectiondiodein

ATP107

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-PurposeSwitchingDeviceApplications Features •LowON-resistance •Slimpackage •Halogenfreecompliance •Largecurrent •4.5Vdrive •Protectiondiodein

ATP107-TL-H

P-Channel Power MOSFET

P-ChannelPowerMOSFET –40V,–50A,17mΩ,SingleATPAK Features •LowON-resistance •Slimpackage •Halogenfreecompliance •Largecurrent •4.5Vdrive •Protectiondiodein

ATP108

P-Channel Power MOSFET

P-ChannelPowerMOSFET –40V,–70A,10.4mΩ,SingleATPAK Features •LowON-resistance •Slimpackage •Halogenfreecompliance •Largecurrent •4.5Vdrive •Protectiondiodein

ATP108

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-PurposeSwitchingDeviceApplications Features •LowON-resistance •Slimpackage •Halogenfreecompliance •Largecurrent •4.5Vdrive •Protectiondiodein

ATP108-TL-H

P-Channel Power MOSFET

P-ChannelPowerMOSFET –40V,–70A,10.4mΩ,SingleATPAK Features •LowON-resistance •Slimpackage •Halogenfreecompliance •Largecurrent •4.5Vdrive •Protectiondiodein

ATP111SM

Standard Crystals

SurfaceMountQuartzCrystal DESCRIPTION TheATP-SMcrystalseriesoffersexcellentlongtermstabilityandreliabilityinaprovenplasticmoldedpackage.Theexcellentshockperformancemakesitsuitablefortoday’smicroprocessor,communication,consumerelectronicandnetworkingapplications.

ATP112

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-PurposeSwitchingDeviceApplications Features •ON-resistanceRDS(on)1=33mΩ(typ.) •4Vdrive •Protectiondiodein •InputCapacitanceCiss=1450pF(typ.) •Halogenfreecompliance