CEU630N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 200V,7.5A,RDS(ON)=0.36W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CEUF630

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●200V,9A,RDS(ON)=400mΩ@VGS=10V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-251&TO-252package.

CHM630PAPT

N-ChannelEnhancementModeFieldEffectTransistor

CL630-CRM

3rd/2ndGenIntel짰Xeon짰/Intel짰CoreTMATX

CMS630

10thGenIntel®CoreTMATX

COM630-B

COMExpressCarrierBoard

CP630

PowerTransistorsPNP-SiliconDarlingtonTransistorChip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize80x80MILS DieThickness8.0MILS BaseBondingPadArea18x27MILS EmitterBondingPadArea34x34MILS TopSideMetalizationAl-30,000Å BackSideMetalizationTi/Pd/Ag-20,000Å

CS630

PhaseControlThyristor

ITRMS=1400A ITAVM=630A VRRM=1200-1600 Features ●Thyristorforlinefrequency ●Internationalstandardpackage ●Long-termstabilityofblockingvoltages ●Gateandauxiliarycathodepinconnection ●Amplifyinggate TypicalApplications ●DCMotorcontro

D630

9A200VN-channelEnhancementModePowerMOSFET

1Description TheseN-channelEnhancedVDMOSFETs,isobtainedby theself-alignedplanartechnologywhichreducethe conductionloss,improveswitchingperformanceand enhancetheavalancheenergy.Whichaccordswiththe RoHSstandard. 2Features ●FastSwitching ●LowONResistance(Rdso

DC630

HighCurrentPowerLineChokes