CHM630PAPT

N-Channel Enhancement Mode Field Effect Transistor

CHM630PAPT

N-Channel Enhancement Mode Field Effect Transistor;

CL630-CRM

3rd/2ndGenIntel짰Xeon짰/Intel짰CoreTMATX

CMS630

10thGenIntel®CoreTMATX

COM630-B

COMExpressCarrierBoard

CP630

PowerTransistorsPNP-SiliconDarlingtonTransistorChip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize80x80MILS DieThickness8.0MILS BaseBondingPadArea18x27MILS EmitterBondingPadArea34x34MILS TopSideMetalizationAl-30,000Å BackSideMetalizationTi/Pd/Ag-20,000Å

CS630

PhaseControlThyristor

ITRMS=1400A ITAVM=630A VRRM=1200-1600 Features ●Thyristorforlinefrequency ●Internationalstandardpackage ●Long-termstabilityofblockingvoltages ●Gateandauxiliarycathodepinconnection ●Amplifyinggate TypicalApplications ●DCMotorcontro

D630

9A200VN-channelEnhancementModePowerMOSFET

1Description TheseN-channelEnhancedVDMOSFETs,isobtainedby theself-alignedplanartechnologywhichreducethe conductionloss,improveswitchingperformanceand enhancetheavalancheenergy.Whichaccordswiththe RoHSstandard. 2Features ●FastSwitching ●LowONResistance(Rdso

DC630

HighCurrentPowerLineChokes

DC630R

HighCurrentPowerLineChokes