COM Express Carrier Board

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DFI

友通资讯

Power Transistors PNP - Silicon Darlington Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 80 x 80 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 18 x 27 MILS Emitter Bonding Pad Area 34 x 34 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Ti/Pd/Ag - 20,000Å

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CENTRAL

Industrial Spec Grade Turnlok® Locking Devices 3 Wire 15, 20 & 30A; 125 & 250V, 277VAC

F E A T U R E S & B E N E F I T S Industrial-strength, brass alloy plug blades and connector contacts resist heat rise, provide excellent conductivity. L630C & L630P Integral flexible rubber cord grommet conforms to and seals around SO cord to provide protection from oils, water, or chip

文件：978.42 Kbytes 页数：4 Pages

LEGRAND

罗格朗

Phase Control Thyristor

ITRMS = 1400 A ITAVM = 630 A VRRM = 1200 - 1600 Features ● Thyristor for line frequency ● International standard package ● Long-term stability of blocking voltages ● Gate and auxiliary cathode pin connection ● Amplifying gate Typical Applications ● DC Motor contro

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IXYS

艾赛斯