ATC100B150JT500XT

RF Power Field Effect Transistor

880MHz,10WAVG.,28VSINGLEN-CDMALATERALN-CHANNELBROADBANDRFPOWERMOSFET Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthisdevicemakesitidealforlarge-signal,common-sourceamplifierapplica

ATC100B150JT500XT

RF Power Field Effect Transistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom2110to 2170MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. •TypicalSingle--Ca

ATC100B150JT500XT

N--Channel Enhancement--Mode Lateral MOSFETs

Features GreaterNegativeGate--SourceVoltageRangeforImprovedClassC Operation DesignedforDigitalPredistortionErrorCorrectionSystems OptimizedforDohertyApplications InTapeandReel.R3Suffix=250Units,32mmTapeWidth,13--inchReel.

ATC100B150JT500XT

RF Power LDMOS Transistors

ATC100B150JT500XT

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

ATC100B150JT500XT

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs