ATC100B6R8BT500XT

RF Power Field Effect Transistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom1805to 1880MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. •TypicalSingle--Ca

ATC100B6R8BT500XT

RF Power Field Effect Transistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom2110to 2170MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. •TypicalSingle--Ca

ATC100B6R8BT500XT

RF Power LDMOS Transistors

N--ChannelEnhancement--ModeLateralMOSFETs These50WRFpowerLDMOStransistorsaredesignedforcellular basestationapplicationscoveringthefrequencyrangeof2110to2170MHz. TypicalSingle--CarrierW--CDMAPerformance:VDD=28Vdc,IDQ=1500mA, Pout=50WAvg.,InputSignalPA

ATC100B6R8BT500XT

RF Power Field Effect Transistors

ATC100B6R8BT500XT

RF Power LDMOS Transistors

ATC100B6R8BT500XT

RF LDMOS Wideband Integrated Power Amplifiers