AT28C040中文资料4-Megabit (512K x 8) Paged Parallel EEPROMs数据手册Microchip规格书

描述 Description

High-performance 1-megabit EEPROM offers access times to 200ns with power dissipation of 440mW. It is accessed like static RAM for the read or write cycle without external components. It contains a 256-byte page register to allow writing of up to 256-bytes simultaneously.The EEPROM features Internal error correction for extended endurance and improved data retention. Optional software data protection mechanism guards against inadvertent writes, and an extra 256 bytes of EEPROM enables device identification or tracking.

简介

AT28C040属于集成电路（IC）的存储器。由制造生产的AT28C040存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。