AT28BV256数据手册集成电路（IC）的存储器规格书PDF

描述 Description

The Microchip AT28BV256 is a high-performance256Kbit Parallel EEPROM offering access times to 200ns with 54mW powerdissipation and 2.7V supply voltage. Deselected, CMOS standby current is lessthan 20µA. Access like static RAM for the read or write cycle without externalcomponents; it contains a 64-byte page register to allow writing of up to 64bytes simultaneously. Optional SoftwareData Protection mechanism guards against inadvertent writes; and an extra64 bytes of EEPROM enables device identification or tracking.

特性 Features

32 Kbits x 8 (256 Kbit)
2.7V to 3.6V Supply
Parallel Interface
200ns access time
Self-Timed Erase and Write Cycles (10 ms max)
Page Write and Byte Write
Data Polling for end of write detection
Low Power Consumption
Read / Write current 15 mA (Max)
Standby current 20 µA (Typ), 50 µA (Max)
Write-Protection
Hardware Protection
Software Data Protect
More than 100,000 erase/write cycles
Data retention > 10 years
Temperature Ranges
Standard Temperature Range: -40°C to 85°C
Available in Green (Pb/Halide-free) Packaging Only
32-lead, Plastic J-leaded Chip Carrier (PLCC)
28-lead, 0.300\" Wide, Plastic Gull Wing Small Outline (SOIC)
28-lead, Plastic Thin Small Outline Package (TSOP)

简介

AT28BV256属于集成电路（IC）的存储器。由制造生产的AT28BV256存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。