4-Megabit 512K x 8 Paged E2PROM

Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis

文件：332.04 Kbytes 页数：12 Pages

ATMEL

爱特梅尔

4-Megabit (512K x 8) Paged Parallel EEPROMs

文件：475.92 Kbytes 页数：16 Pages

ATMEL

爱特梅尔

4-Megabit (512K x 8) Paged Parallel EEPROMs

文件：385.3 Kbytes 页数：15 Pages

ATMEL

爱特梅尔

Automatic Page Write Operation

文件：385.33 Kbytes 页数：15 Pages

ATMEL

爱特梅尔

4-Megabit (512K x 8) Paged Parallel EEPROMs

High-performance 1-megabit EEPROM offers access times to 200ns with power dissipation of 440mW. It is accessed like static RAM for the read or write cycle without external components. It contains a 256-byte page register to allow writing of up to 256-bytes simultaneously.The EEPROM features Internal

Microchip

微芯科技

4-Megabit 512K x 8 Paged E2PROM

Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis

文件：332.04 Kbytes 页数：12 Pages

ATMEL

爱特梅尔

4-Megabit 512K x 8 Paged E2PROM

Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis

文件：332.04 Kbytes 页数：12 Pages

ATMEL

爱特梅尔

4-Megabit 512K x 8 Paged E2PROM

Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis

文件：332.04 Kbytes 页数：12 Pages

ATMEL

爱特梅尔

4-Megabit 512K x 8 Paged E2PROM

Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis

文件：332.04 Kbytes 页数：12 Pages

ATMEL

爱特梅尔

4-Megabit 512K x 8 Paged E2PROM

Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis

文件：332.04 Kbytes 页数：12 Pages

ATMEL

爱特梅尔