1 Megabit 128K x 8 Paged CMOS E2PROM

The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m

文件：570.6 Kbytes 页数：11 Pages

Atmel

爱特梅尔

Military Grade 1-Mbit (131,072 x 8) Paged Parallel EEPROM

文件：524.14 Kbytes 页数：31 Pages

Microchip

微芯科技

1-megabit (128K x 8) Paged Parallel EEPROM

文件：410.38 Kbytes 页数：17 Pages

Atmel

爱特梅尔

1-Megabit (128K x 8) Paged Parallel EEPROMs

文件：604.21 Kbytes 页数：16 Pages

Atmel

爱特梅尔

1 Megabit 128K x 8 Paged CMOS E2PROM

文件：657.33 Kbytes 页数：11 Pages

Atmel

爱特梅尔

5V 1Mbit (128Kbit x 8) Parallel EEPROM with Software Data Protection

The Microchip AT28C010 is a high-performance1-megabit Parallel EEPROM available in both Industrial and Military tempranges, offering access times to 120ns with power dissipation of 220mW (440mWmilitary). Deselected, CMOS standby current is less than 200µA (300µAmilitary). Access like static RAM for 128 Kbits x 8 (1 megabit)\n5V ± 10% Supply\nParallel Interface\n120ns access time\nSelf-Timed Erase and Write Cycles (10 ms max)\nPage Write and Byte Write\nData Polling for end of write detection\nLow Power Consumption\nRead / Write current 40 mA (Max)\nStandby current TTL 2 mA (Max), CMOS 200 ;

Microchip

微芯科技

1 Megabit 128K x 8 Paged CMOS E2PROM

The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m

文件：570.6 Kbytes 页数：11 Pages

Atmel

爱特梅尔

Space 1-megabit (128K x 8) Paged Parallel EEPROMs

Description The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissi

文件：236.69 Kbytes 页数：17 Pages

Atmel

爱特梅尔

Space 1-megabit (128K x 8) Paged Parallel EEPROMs

Description The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissi

文件：236.69 Kbytes 页数：17 Pages

Atmel

爱特梅尔

Space 1-megabit (128K x 8) Paged Parallel EEPROMs

Description The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissi

文件：236.69 Kbytes 页数：17 Pages

Atmel

爱特梅尔