AT28C010-12DK-M中文资料爱特梅尔数据手册PDF规格书

Description

The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 440 mW. When the device is deselected, the CMOS standby current is less than 300 µA.

Features

• Fast Read Access Time – 120 ns

• Automatic Page Write Operation

– Internal Address and Data Latches for 128 Bytes

– Internal Control Timer

• Fast Write Cycle Time

– Page Write Cycle Time – 10 ms Maximum

– 1 to 128-byte Page Write Operation

• Low Power Dissipation

– 80 mA Active Current

– 300 µA CMOS Standby Current

• Hardware and Software Data Protection

• DATA Polling for End of Write Detection

• High Reliability CMOS Technology

– Endurance: 104 or 105 Cycles

– Data Retention: 10 Years

• Operating Range: 4.5V to 5.5V, -55 to +125°C

• CMOS and TTL Compatible Inputs and Outputs

• Batch Tested for 10 Krad TID and 70 MeV Latch-up Capability

• JEDEC Approved byte-Wide Pinout

• 435 Mils Wide 32-Pin Flat Pack Package