Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago’s AT-42010 is a general purpose NPN bipolar tran sistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different fu

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AVAGO

安华高

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Hewlett-Packard’s AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron emitter-to emitter pitch enables this transistor to be used in many d

文件：52.89 Kbytes 页数：5 Pages

HP

安捷伦

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description\nAvago’s AT-42010 is a general purpose NPN bipolar tran sistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functi • High Output Power:\n   21.0 dBm Typical P1 dB at 2.0 GHz\n   20.5 dBm Typical P1 dB at 4.0 GHz\n• High Gain at 1 dB Compression:\n   14.0 dB Typical G1 dB at 2.0 GHz\n   9.5 dB Typical G1 dB at 4.0 GHz\n• Low Noise Figure:\n   1.9 dB Typical NFO at 2.0 GHz\n• High Gain-Bandwidth Product: 8.0 GHz T;

Broadcom

博通

Package：4-SMD（100 密耳）；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 12V 8GHZ 100SMD

BOARDCOM

博通