AT-42010分立半导体产品的晶体管-双极（BJT）-射频规格书PDF中文资料

描述 Description

Hewlett-Packard’s AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron emitter-to emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 Ω up to 1 GHz , makes this device easy to use as a low noise amplifier.

The AT-42010 bipolar transistor is fabricated using Hewlett-Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion implantation, self-alignment techniques, and gold metalization in the fabrication of this device.

特性 Features

• High Output Power:

12.0 dBm Typical P1 dB at 2.0 GHz

20.5 dBm Typical P1 dBat 4.0 GHz

• High Gain at 1 dB Compression:

14.0 dB Typical G1 dBat 2.0 GHz

9.5 dB Typical G1 dBat 4.0 GHz

• Low Noise Figure:

1.9 dB Typical NFOat 2.0 GHz

• High Gain-Bandwidth Product: 8.0 GHz Typical fT

• Hermetic Gold-ceramic Microstrip Package