AT-42010中文资料Up to 6 GHz Medium Power Silicon Bipolar Transistor数据手册Broadcom规格书

描述 Description

Avago’s AT-42010 is a general purpose NPN bipolar tran sistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter fnger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifer, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50Ω up to 1 GHz, makes this device easy to use as a low noise amplifer.
The AT-42010 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of this device.

特性 Features

• High Output Power:
   21.0 dBm Typical P1 dB at 2.0 GHz
   20.5 dBm Typical P1 dB at 4.0 GHz
• High Gain at 1 dB Compression:
   14.0 dB Typical G1 dB at 2.0 GHz
   9.5 dB Typical G1 dB at 4.0 GHz
• Low Noise Figure:
   1.9 dB Typical NFO at 2.0 GHz
• High Gain-Bandwidth Product: 8.0 GHz Typical fT
• Hermetic Gold-ceramic Microstrip Package

简介

AT-42010属于分立半导体产品的晶体管-双极（BJT）-射频。由Broadcom制造生产的AT-42010晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。